IXYP30N120C3 Datasheet - IXYS

IXYP30N120C3 High-Speed IGBT

1200V XPTTM GenX3TM IGBTs High-Speed IGBT for 20-50 kHz Switching IXYP30N120C3 IXYH30N120C3 VCES = 1200V IC110 = 30A VCE(sat)  3.3V tfi(typ) = 88ns Symbol VCES VCGR VGES VGEM IC25 IICCM110 IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Solde.

IXYP30N120C3 Features

* High Voltage Package

* Optimized for Low Switching Losses

* Square RBSOA

* Positive Thermal Coefficient of Vce(sat)

* Avalanche Rated

* International Standard Packages Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* High Frequency Pow

IXYP30N120C3-IXYS.pdf