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IXGT35N120C, IXGH35N120C IGBT Lightspeed Series

IXGT35N120C Description

Advance Technical Information IGBT Lightspeed Series IXGH 35N120C IXGT 35N120C VCES = 1200 V = 70 A IC25 VCE(sat) = 4.0 V tfi(typ) = 115 ns Symbol.

IXGT35N120C Features

* G = Gate, E = Emitter, Maximum Lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) 1.13/10 Nm/lb. in. TO-247 AD TO-268 6 4 g g
* International standard packages JEDEC TO-268 surface a

IXGT35N120C Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25°C TJ = 125°C V V mA mA nA V V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 1 mA, VGE = 0 V = 750 mA, VCE = VGE 5 250 5 ±100 4.0

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This datasheet PDF includes multiple part numbers: IXGT35N120C, IXGH35N120C. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXGT35N120C, IXGH35N120C
Manufacturer
IXYS Corporation
File Size
85.86 KB
Datasheet
IXGH35N120C_IXYSCorporation.pdf
Description
IGBT Lightspeed Series
Note
This datasheet PDF includes multiple part numbers: IXGT35N120C, IXGH35N120C.
Please refer to the document for exact specifications by model.

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IGBT Lightspeed Series IXYS Corporation
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