Datasheet4U Logo Datasheet4U.com

IXTK68N20, IXTH68N20 Power MOSFET

IXTK68N20 Description

High Current MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTK 74 N20 IXTH 68 N20 200 V 200 V ID25 RDS(on) 74 A 35 mW 68 A 35 mW Preliminary data.

IXTK68N20 Features

* • • • • Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure International standard package Fast switching times Symbol Test Conditions Characteristic Values Min. Typ. 200 2.0 4.0 ±100 TJ = 25°C TJ = 125°C 500 3 35 Max. V V nA µA mA mΩ (TJ = 25°C unless otherwise specified) VDSS V

IXTK68N20 Applications

* • • • • Motor controls DC choppers Uninterruptable Power Supplies (UPS) Switch-mode and resonant-mode Advantages • Easy to mount with one screw (isolated mounting screw hole) • Space savings • High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2% IXYS reserves the

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXTK68N20, IXTH68N20. Please refer to the document for exact specifications by model.
datasheet Preview Page 2

Datasheet Details

Part number
IXTK68N20, IXTH68N20
Manufacturer
IXYS Corporation
File Size
279.05 KB
Datasheet
IXTH68N20_IXYSCorporation.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTK68N20, IXTH68N20.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

📌 All Tags

Power MOSFET IXYS Corporation
IXYS Corporation IXTK68N20-like datasheet