2SA1166 Datasheet - Inchange Semiconductor

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2SA1166 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA1166 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min). Good Linearity of hFE. High Power Dissipation. Minimum Lot-to-Lot variatio.

2SA1166_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1166

Manufacturer:

Inchange Semiconductor

File Size:

217.82 KB

Description:

POWER TRANSISTOR

Applications

* Power amplifier applications
* Recommended for 100W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC C

2SA1166 Distributors

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2SA1166 POWER TRANSISTOR Inchange Semiconductor

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