2SA1166 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1166 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min). Good Linearity of hFE. High Power Dissipation. Minimum Lot-to-Lot variatio.

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Datasheet Specifications

Part number: 2SA1166
Manufacturer: Inchange Semiconductor
File Size: 217.82 KB
Datasheet: 2SA1166_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Power amplifier applications
* Recommended for 100W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC C

2SA1166 Distributors

📁 Related Datasheet

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2SA1166 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1166-like datasheet