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2SA1166 - POWER TRANSISTOR

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Part number 2SA1166
Manufacturer Inchange Semiconductor
File Size 217.82 KB
Description POWER TRANSISTOR
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Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) Good Linearity of hFE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommended for 100W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Vo

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