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2SA1166 Datasheet - Inchange Semiconductor

POWER TRANSISTOR

2SA1166 General Description

*Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) *Good Linearity of hFE *High Power Dissipation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Power amplifier applications *Recommended for 100W high-fidelity audio f.

2SA1166 Datasheet (217.82 KB)

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Datasheet Details

Part number:

2SA1166

Manufacturer:

Inchange Semiconductor

File Size:

217.82 KB

Description:

Power transistor.

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2SA1166 POWER TRANSISTOR Inchange Semiconductor

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