2SA505 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA505 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min. Collector-Emitter Saturation Voltage- VCE(sat)= -0. Min.

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Datasheet Specifications

Part number: 2SA505
Manufacturer: Inchange Semiconductor
File Size: 214.76 KB
Datasheet: 2SA505-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1 A IE Emitter Current-Con

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2SA505 Silicon PNP Power Transistor Inchange Semiconductor

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