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2SC3678 Silicon NPN Power Transistors

2SC3678 Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min). High Switching Speed. High Reliability. Minimum Lot-to-Lot variation.

2SC3678 Applications

* Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 3 A ICM Col

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Datasheet Details

Part number
2SC3678
Manufacturer
Inchange Semiconductor
File Size
199.20 KB
Datasheet
2SC3678_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

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Silicon NPN Power Transistors Inchange Semiconductor
Inchange Semiconductor 2SC3678-like datasheet