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2SC3673 Datasheet - Toshiba Semiconductor

2SC3673, Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications 2SC3673 Unit: mm * High DC current .
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2SC3673_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SC3673

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

144.34 KB

Description:

Silicon NPN Transistor

Features

* ct or related software or technology are strictly prohibited except in compliance with

Applications

* Solenoid Drive Applications 2SC3673 Unit: mm
* High DC current gain : hFE = 500 (min) (IC = 400 mA)
* Low collector-emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 300 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltag

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