2SC3673 Datasheet - Toshiba Semiconductor

2SC3673 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications 2SC3673 Unit: mm High DC current gain : hFE = 500 (min) (IC = 400 mA) Low collector-emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 300 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 7 V Collector current IC 2 A Base current.

2SC3673 Features

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2SC3673_ToshibaSemiconductor.pdf