* High breakdown voltage (VCEO min=900V).
* Small Cob (Cob typ=5.0pF).
* Wide ASO (Adoption of MBIT process).
* High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC3676] Specifications JEDEC : TO-220AB EIAJ : SC46 1 : Base 2 : Collector 3 : Emitter A
2SC3676
Sanyo Semicon Device
94.90 KB
Npn transistor.
Ordering number:EN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications .
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