2SC3670 Silicon NPN Transistor

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications 2SC3670 Unit: mm <.

📥 Download Datasheet

2SC3670 Datasheet Preview — Preview of 2SC3670 PDF

Datasheet Specifications

Part number: 2SC3670
Manufacturer: Toshiba ↗ Semiconductor
File Size: 123.24 KB
Datasheet: 2SC3670_ToshibaSemiconductor.pdf
Description: Silicon NPN Transistor

Applications

* Medium Power Amplifier Applications 2SC3670 Unit: mm
* High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ. ) (VCE = 1 V, IC = 2 A)
* Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Ab

2SC3670 Distributors

📁 Related Datasheet

2SC3675 2SC3676 2SC3677 2SC3678 2SC3679 2SC3679B

📌 All Tags

2SC3670 Silicon NPN Transistor Toshiba Semiconductor

Toshiba Semiconductor 2SC3670-like datasheet