2SC3671 Datasheet - Toshiba Semiconductor

2SC3671 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3671 Strobe Flash Applications Medium Power Amplifier Applications 2SC3671 Unit: mm High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) High collector power dissipation Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collecto.

2SC3671_ToshibaSemiconductor.pdf