2SC3672 Datasheet - Toshiba Semiconductor

2SC3672 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC3672 2SC3672 High-Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications Unit: mm High breakdown voltage: VCBO = 300 V, VCEO = 300 V Low saturation voltage: VCE (sat) = 0.5 V (max) Small collector output capacitance: Cob = 3 pF (typ.) Complementary to 2SA1432. Absolute Maximum Ratings (Ta = 25°C) Characteristics .

2SC3672 Features

* XIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INC

2SC3672_ToshibaSemiconductor.pdf