2SC3672 Silicon NPN Transistor

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC3672 2SC3672 High-Voltage Control Applications Plasma Display, Nixie Tube Drive.

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Datasheet Specifications

Part number: 2SC3672
Manufacturer: Toshiba ↗ Semiconductor
File Size: 132.18 KB
Datasheet: 2SC3672_ToshibaSemiconductor.pdf
Description: Silicon NPN Transistor

Features

* XIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INC

Applications

* Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications Unit: mm
* High breakdown voltage: VCBO = 300 V, VCEO = 300 V
* Low saturation voltage: VCE (sat) = 0.5 V (max)
* Small collector output capacitance: Cob = 3 pF (typ. )

2SC3672 Distributors

📁 Related Datasheet

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2SC3672 Silicon NPN Transistor Toshiba Semiconductor

Toshiba Semiconductor 2SC3672-like datasheet