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2SC3856-P - Silicon NPN Transistor

2SC3856-P Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3856-P .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min). Good Linearity of hFE APPLICATIONS. Designed for audio and general purpo.

2SC3856-P Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 15 A IB Base Current-Continuous

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Silicon NPN Transistor Inchange Semiconductor
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