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2SD1032 Silicon NPN Power Transistor

2SD1032 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Large Collector Power Dissipation. Complement to Type 2SB812. Minimum Lot-.

2SD1032 Applications

* Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC

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Datasheet Details

Part number
2SD1032
Manufacturer
Inchange Semiconductor
File Size
217.61 KB
Datasheet
2SD1032_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD1032-like datasheet