Datasheet4U Logo Datasheet4U.com

KTC2800 - Silicon NPN Power Transistors

KTC2800 Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage VCEO= 160V(Min). Complement to Type KTA1700. Minimum Lot-to-Lot variations for robust device per.

KTC2800 Applications

* Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current 1.5 A IB Base Current Collector Power Dissipati

📥 Download Datasheet

Preview of KTC2800 PDF
datasheet Preview Page 2

Datasheet Details

Part number
KTC2800
Manufacturer
Inchange Semiconductor
File Size
210.79 KB
Datasheet
KTC2800-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

📁 Related Datasheet

  • KTC2801 - TRIPLE DIFFUSED NPN TRANSISTOR (KEC)
  • KTC2803 - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
  • KTC2804 - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
  • KTC2814 - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
  • KTC2815D - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
  • KTC2815L - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
  • KTC2825D - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
  • KTC2874 - SILICON NPN TRANSISTOR (KEC)

📌 All Tags

Silicon NPN Power Transistors Inchange Semiconductor
Inchange Semiconductor KTC2800-like datasheet