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MJD50 Silicon NPN Power Transistor

MJD50 Description

isc Silicon NPN Power Transistors .
DC Current Gain -hFE = 30~150@ IC= 0. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min). DPAK for Surface Mount Applicatio.

MJD50 Applications

* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
* Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collect

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Datasheet Details

Part number
MJD50
Manufacturer
Inchange Semiconductor
File Size
186.24 KB
Datasheet
MJD50-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor MJD50-like datasheet