ITCH18180B4 Datasheet (Innogration) - High Power RF LDMOS FET

ITCH18180B4, High Power RF LDMOS FET

The ITCH18180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1785 to 1880 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

ITCH18180B4 *Typ

ITCH18180B4 Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Pb-free, RoHS-compliant Table