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ITCH18180B4

High Power RF LDMOS FET

ITCH18180B4 Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Pb-free, RoHS-compliant Table

ITCH18180B4 General Description

The ITCH18180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1785 to 1880 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH18180B4
*Typ.

ITCH18180B4 Datasheet (954.89 KB)

Preview of ITCH18180B4 PDF

Datasheet Details

Part number:

ITCH18180B4

Manufacturer:

Innogration

File Size:

954.89 KB

Description:

High power rf ldmos fet.
Innogration (Suzhou) Co., Ltd. Document Number: ITCH18180B4 Preliminary Datasheet V1.0 1785MHz-1880MHz, 180W, 28V High Power RF LDMOS FETs Descript.

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ITCH18180B4 High Power LDMOS FET Innogration

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