ITCH18180B4E, ITCH18180B4 Datasheet - Innogration

ITCH18180B4E High Power RF LDMOS FET

The ITCH18180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1785 to 1880 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH18180B4 *Typ.

ITCH18180B4E Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Pb-free, RoHS-compliant Table

ITCH18180B4-Innogration.pdf

ITCH18180B4E Datasheet Preview — This datasheet PDF includes multiple part numbers: ITCH18180B4E, ITCH18180B4. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ITCH18180B4E, ITCH18180B4

Manufacturer:

Innogration

File Size:

954.89 KB

Description:

High power rf ldmos fet.

Note:

This datasheet PDF includes multiple part numbers: ITCH18180B4E, ITCH18180B4.
Please refer to the document for exact specifications by model.

ITCH18180B4E Distributor

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ITCH18180B4E ITCH18180B4 High Power LDMOS FET Innogration