Datasheet Details
Part number:
ITCH18180B4E, ITCH18180B4
Manufacturer:
Innogration
File Size:
954.89 KB
Description:
High power rf ldmos fet.
Note:
This datasheet PDF includes multiple part numbers: ITCH18180B4E, ITCH18180B4.
Please refer to the document for exact specifications by model.
ITCH18180B4E, ITCH18180B4, High Power RF LDMOS FET
The ITCH18180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1785 to 1880 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH18180B4 *Typ
ITCH18180B4E Features
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Pb-free, RoHS-compliant Table
📁 Related Datasheet
📌 All Tags
