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IRF6713SPBF

DirectFET TM Power MOSFET

IRF6713SPBF Features

* n Diode Forward Voltage 100 Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) 3.0 80 ID, Drain Current (A) 2.5 60 2.0 ID = 50µA 40 1.5 ID = 100µA ID = 250µA ID = 1.0mA ID = 1.0A 20 1.0 0 25 50 75 100 125 150 T C , Case Temperature (°C) 0.5 -75 -50 -25 0 25 50

IRF6713SPBF General Description

The IRF6713SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries .

IRF6713SPBF Datasheet (263.11 KB)

Preview of IRF6713SPBF PDF

Datasheet Details

Part number:

IRF6713SPBF

Manufacturer:

International Rectifier

File Size:

263.11 KB

Description:

Directfet tm power mosfet.
www.DataSheet4U.com IRF6713SPbF IRF6713STRPbF Typical values (unless otherwise specified) PD - 96129A DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 2.7nC .

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IRF6713SPBF DirectFET Power MOSFET International Rectifier

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