IRF6713SPBF DirectFET TM Power MOSFET

International Rectifier

Description

www.DataSheet4U.com IRF6713SPbF IRF6713STRPbF Typical values (unless otherwise specified) PD - 96129A DirectFET Power MOSFET RDS(on) Qgs2 2.7nC .
The IRF6713SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.

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Datasheet Specifications

Part number: IRF6713SPBF
Manufacturer: International Rectifier
File Size: 263.11 KB
Datasheet: IRF6713SPBF_InternationalRectifier.pdf
Description: DirectFET TM Power MOSFET

Features

* n Diode Forward Voltage 100 Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) 3.0 80 ID, Drain Current (A) 2.5 60 2.0 ID = 50µA 40 1.5 ID = 100µA ID = 250µA ID = 1.0mA ID = 1.0A 20 1.0 0 25 50 75 100 125 150 T C , Case Temperature (°C) 0.5 -75 -50 -25 0 25 50

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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IRF6713SPBF DirectFET Power MOSFET International Rectifier

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