Description
www.DataSheet4U.com IRF6713SPbF IRF6713STRPbF Typical values (unless otherwise specified) PD - 96129A DirectFET Power MOSFET RDS(on) Qgs2 2.7nC .
The IRF6713SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.
Features
* n Diode Forward Voltage
100
Fig11. Maximum Safe Operating Area
Typical VGS(th) Gate threshold Voltage (V)
3.0
80
ID, Drain Current (A)
2.5
60
2.0 ID = 50µA
40
1.5
ID = 100µA ID = 250µA ID = 1.0mA ID = 1.0A
20
1.0
0 25 50 75 100 125 150 T C , Case Temperature (°C)
0.5 -75 -50 -25 0 25 50
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t