IRF6713STRPBF Datasheet - International Rectifier

IRF6713STRPBF DirectFET TM Power MOSFET

The IRF6713SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries .

www.DataSheet4U.com IRF6713SPbF IRF6713STRPbF Typical values (unless otherwise specified) PD - 96129A DirectFET Power MOSFET RDS(on) Qgs2 2.7nC l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existi.

IRF6713STRPBF Features

* n Diode Forward Voltage 100 Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) 3.0 80 ID, Drain Current (A) 2.5 60 2.0 ID = 50µA 40 1.5 ID = 100µA ID = 250µA ID = 1.0mA ID = 1.0A 20 1.0 0 25 50 75 100 125 150 T C , Case Temperature (°C) 0.5 -75 -50 -25 0 25 50

IRF6713STRPBF Datasheet (263.11 KB)