IRF6716MPBF Datasheet - International Rectifier

IRF6716MPBF N-Channel HEXFET Power MOSFET

The IRF6716MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries use.

IRF6716MPbF IRF6716MTRPbF l l l l l l l l l l PD - 97274 RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) Low Profile (<0.6 mm) 25V max ±20V max 1.2mΩ@10V 2.0mΩ@ 4.5V Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ultra Low Package Inductance 39nC 12nC 5.3nC 28nC 27nC 1.9V Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible wi.

IRF6716MPBF Features

* Voltage (V) 1 T A = 25°C T J = 150°C 0.1 0.01 Single Pulse 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 11. Maximum Safe Operating Area 3.0 Typical VGS(

IRF6716MPBF Datasheet (669.76 KB)