Description
IRF6716MPbF IRF6716MTRPbF l l l l l l l l l l PD - 97274 RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) Low Profile (<0.6 .
The IRF6716MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.
Features
* Voltage (V)
1
T A = 25°C
T J = 150°C 0.1 0.01
Single Pulse 0.10 1.00 10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 T C , Case Temperature (°C)
Fig 11. Maximum Safe Operating Area
3.0
Typical VGS(
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t