IRF6716MTRPBF Datasheet - International Rectifier

N-Channel HEXFET Power MOSFET

IRF6716MTRPBF Features

* Voltage (V) 1 T A = 25°C T J = 150°C 0.1 0.01 Single Pulse 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 11. Maximum Safe Operating Area 3.0 Typical VGS(

IRF6716MTRPBF General Description

The IRF6716MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries use.

IRF6716MTRPBF Datasheet (669.76 KB)

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IRF6716MTRPBF

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International Rectifier

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669.76 KB

Description:

N-channel hexfet power mosfet.
IRF6716MPbF IRF6716MTRPbF l l l l l l l l l l PD - 97274 RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) Low Profile (<0.6 .

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IRF6716MTRPBF N-Channel HEXFET Power MOSFET International Rectifier

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IRF6716MTRPBF Features

IRF6716MTRPBF General Description

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