Part number:
IRGB30B60K
Manufacturer:
International Rectifier
File Size:
354.36 KB
Description:
Insulated gate bipolar transistor.
IRGB30B60K_InternationalRectifier.pdf
Datasheet Details
IRGB30B60K Features
* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits
IRGB30B60K_InternationalRectifier.pdf
Datasheet Details
IRGB30B60K
International Rectifier
354.36 KB
Insulated gate bipolar transistor.
IRGB30B60K Distributor
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