Datasheet Details
- Part number
- IRGB30B60K
- Manufacturer
- International Rectifier
- File Size
- 354.36 KB
- Datasheet
- IRGB30B60K_InternationalRectifier.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
IRGB30B60K Description
PD - 94799 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60K IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at TJ=175°C .IRGB30B60K Features
* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits
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