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IRGB30B60K

INSULATED GATE BIPOLAR TRANSISTOR

IRGB30B60K Features

* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits

IRGB30B60K Datasheet (354.36 KB)

Preview of IRGB30B60K PDF

Datasheet Details

Part number:

IRGB30B60K

Manufacturer:

International Rectifier

File Size:

354.36 KB

Description:

Insulated gate bipolar transistor.

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IRGB30B60K INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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