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IRGB30B60KPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRGB30B60KPBF Features

* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G E tsc > 10µs, TJ

IRGB30B60KPBF Datasheet (349.14 KB)

Preview of IRGB30B60KPBF PDF

Datasheet Details

Part number:

IRGB30B60KPBF

Manufacturer:

International Rectifier

File Size:

349.14 KB

Description:

Insulated gate bipolar transistor.

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IRGB30B60KPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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