Part number:
IRGB30B60KPBF
Manufacturer:
International Rectifier
File Size:
349.14 KB
Description:
Insulated gate bipolar transistor.
* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G E tsc > 10µs, TJ
IRGB30B60KPBF Datasheet (349.14 KB)
IRGB30B60KPBF
International Rectifier
349.14 KB
Insulated gate bipolar transistor.
📁 Related Datasheet
IRGB30B60K INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB10B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB14C40L INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB14C40LPBF IGBT (International Rectifier)
IRGB15B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB20B60PD1 SMPS IGBT (International Rectifier)
IRGB20B60PD1PBF SMPS IGBT (International Rectifier)
IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)