IRGB440U - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number: IRGB440U
Manufacturer: International Rectifier
File Size: 181.81 KB
Datasheet: IRGB440U_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

IRGB440U Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 22A n-channel.

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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