IRGB4B60KD1PBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGB4B60KD1PBF
Manufacturer	International Rectifier
File Size	437.61 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB4B60KD1PBF_InternationalRectifier.pdf

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C E n-channel VCE(on) typ. = 2.1V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transien.

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Published: May 30, 2007 |