IRGB4B60KPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGB4B60KPBF
Manufacturer	International Rectifier
File Size	387.58 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB4B60KPBF-InternationalRectifier.pdf

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free. C IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF VCES = 600V IC = 6.8A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current.

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Published: Mar 31, 2014 |