IRGB8B60K Datasheet - International Rectifier

IRGB8B60K, INSULATED GATE BIPOLAR TRANSISTOR

PD - 94545C INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. C IRGB8B60K IRGS8B60K IRGSL8B60K VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Benefits
* Benchmark Effic

IRGB8B60K_InternationalRectifier.pdf