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IRGB8B60K INSULATED GATE BIPOLAR TRANSISTOR

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Description

PD - 94545C INSULATED GATE BIPOLAR TRANSISTOR .

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Datasheet Specifications

Part number
IRGB8B60K
Manufacturer
International Rectifier
File Size
472.11 KB
Datasheet
IRGB8B60K_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. C IRGB8B60K IRGS8B60K IRGSL8B60K VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Benefits
* Benchmark Effic

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International Rectifier IRGB8B60K-like datasheet