IRGB8B60KPbF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGB8B60KPbF
Manufacturer	International Rectifier
File Size	453.29 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB8B60KPbF_InternationalRectifier.pdf

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ.

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Published: May 30, 2007 |