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IRGB8B60KPbF Datasheet - International Rectifier

IRGB8B60KPbF_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRGB8B60KPbF

Manufacturer:

International Rectifier

File Size:

453.29 KB

Description:

Insulated gate bipolar transistor.

IRGB8B60KPbF, INSULATED GATE BIPOLAR TRANSISTOR

IRGB8B60KPbF Features

* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Be

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IRGB8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
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