IRGS6B60K Features
* Low VCE (on) Non Punch Through IGBT Technology.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Positive VCE (on) Temperature Coefficient. C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = 7.0A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits
* Benchmark E
IRGB6B60K_InternationalRectifier.pdf
Datasheet Details
IRGS6B60K, IRGB6B60K
International Rectifier
285.73 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGS6B60K, IRGB6B60K.
Please refer to the document for exact specifications by model.
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IRGS6B60K Distributor
