IRGS6B60KD
International Rectifier
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Insulated gate bipolar transistor.
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IRGS6B60K - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
PD - 94575A
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Ca.
IRGS6B60KD - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
PD - 95229
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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VCES = 6.
IRGS6B60KDPBF - Insulated Gate Bipolar Transistor
(International Rectifier)
PD - 95229C
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low.
IRGS6B60KPBF - Insulated Gate Bipolar Transistor
(International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR
PD - 95644A
IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF
Features
• Low VCE (on) Non Punch Through IGBT Technology. • 1.
IRGS10B60KD - INSULATED GATE BIPOLAR TRANSISTOR
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PD - 94382D
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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IRGB10B60KD IRGS10B60KD IRGSL10B60KD
VCES = 600V IC = 12A, TC=100.
IRGS10B60KDPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 94925A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF
VCES = 600V IC = 12.
IRGS14C40L - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 93891A
Ignition IGBT
Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-cla.
IRGS14C40LPBF - IGBT
(International Rectifier)
PD - 95193A
Ignition IGBT
Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Sel.
IRGS15B60KD - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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IRGB15B60KD IRGS15B60KD IRGSL15B60KD
VCES = 600V IC = 15A, TC=100.
IRGS15B60KDPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 95194A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Dio.