* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits
IRGS6B60KD Datasheet (349.29 KB)
IRGS6B60KD
International Rectifier
349.29 KB
Insulated gate bipolar transistor.
www.DataSheet4U.com
PD - 94381E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB6B60KD IRGS6B60KD IRGSL6B60KD
VCES = 600.
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