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IRGS6B60KDPBF

Insulated Gate Bipolar Transistor

IRGS6B60KDPBF Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10μs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* Lead-Free G E n-channel IRGB

IRGS6B60KDPBF Datasheet (310.35 KB)

Preview of IRGS6B60KDPBF PDF

Datasheet Details

Part number:

IRGS6B60KDPBF

Manufacturer:

International Rectifier

File Size:

310.35 KB

Description:

Insulated gate bipolar transistor.

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TAGS

IRGS6B60KDPBF Insulated Gate Bipolar Transistor International Rectifier

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