IRGS6B60KDPBF Insulated Gate Bipolar Transistor

International Rectifier

IRGS6B60KDPBF Description

PD - 95229C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C .

IRGS6B60KDPBF Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10μs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Lead-Free G E n-channel IRGB

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Datasheet Details

Part number: IRGS6B60KDPBF
Manufacturer: International Rectifier
File Size: 310.35 KB
Datasheet: IRGS6B60KDPBF-InternationalRectifier.pdf
Description: Insulated Gate Bipolar Transistor

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Insulated Gate Bipolar Transistor International Rectifier

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