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IRGS6B60KPBF Insulated Gate Bipolar Transistor

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Description

INSULATED GATE BIPOLAR TRANSISTOR PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF .

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Datasheet Specifications

Part number
IRGS6B60KPBF
Manufacturer
International Rectifier
File Size
288.26 KB
Datasheet
IRGS6B60KPBF-InternationalRectifier.pdf
Description
Insulated Gate Bipolar Transistor

Features

* Low VCE (on) Non Punch Through IGBT Technology.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Positive VCE (on) Temperature Coefficient.
* Lead-Free. Benefits
* Benchmark Efficiency for Motor Control.
* Rugged Transient Performance.

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