IRGS6B60KPBF

Insulated Gate Bipolar Transistor

International Rectifier

* Low VCE (on) Non Punch Through IGBT Technology.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Positive VCE (on) Temperature Coefficient.

* Lead-Free. Benefits

* Benchmark Efficiency for Motor Control.

* Rugged Transient Performance.

IRGS6B60KPBF

International Rectifier

288.26 KB

Insulated gate bipolar transistor.

📁 Related Datasheet

IRGS6B60K INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS6B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS6B60KDPBF Insulated Gate Bipolar Transistor (International Rectifier)

IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS14C40L INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS14C40LPBF IGBT (International Rectifier)

IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

TAGS

Image Gallery