IRGS6B60KD, IRGB6B60KDPBF Datasheet - International Rectifier

IRGS6B60KD INSULATED GATE BIPOLAR TRANSISTOR

IRGS6B60KD Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* TO-220 is available in PbF as

Datasheet Details

IRGS6B60KD, IRGB6B60KDPBF

International Rectifier

349.15 KB

Insulated gate bipolar transistor.

This datasheet PDF includes multiple part numbers: IRGS6B60KD, IRGB6B60KDPBF.
Please refer to the document for exact specifications by model.

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