Datasheet Details
- Part number
- IRF6641TRPBF
- Manufacturer
- International Rectifier
- File Size
- 282.73 KB
- Datasheet
- IRF6641TRPBF_InternationalRectifier.pdf
- Description
- N-Channel HEXFET Power MOSFET
IRF6641TRPBF Description
www.DataSheet4U.com PD - 97262 IRF6641TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) RoHS Compliant l Lead-Free (Qua.
The IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.
IRF6641TRPBF Features
* = 150°C Single Pulse 1 10 100
1msec
1000
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) , Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
6.0
VDS, Drain-to-Source Voltage (V)
5
4
ID, Drain Current (A)
5.0
3
4.0 ID ID ID ID = 150µA = 250µA = 1.0mA = 1.0A
2
IRF6641TRPBF Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t
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