IRF6645PBF - Power MOSFET
The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries
IRF6645PbF IRF6645TRPbF l RoHS Compliant, Halogen-Free l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) 100
IRF6645PBF Features
* IRF6645/TRPbF 1000 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 100μsec 10 ISD, Reverse Drain Current (A) 1.0 VGS = 0V 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 1 TA = 25°C Tj = 150°C Single Pulse 0.1 0.1 1.0
