IRF6714MTRPbF, IRF6714MPbF - Power MOSFET

International Rectifier

IRF6714MTRPbF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRF6714MTRPbF, IRF6714MPbF. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	IRF6714MTRPbF, IRF6714MPbF
Manufacturer	International Rectifier ↗
File Size	245.11 KB
Description	Power MOSFET
Datasheet	IRF6714MPbF-InternationalRectifier.pdf
Note	This datasheet PDF includes multiple part numbers: IRF6714MTRPbF, IRF6714MPbF. Please refer to the document for exact specifications by model.

IRF6714MTRPbF Product details

Description

The IRF6714MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

Features

Fig11. MVDaxSi,mDuramin-tSo-aSfoeuOrcepeVroaltatigneg(VA) rea ID, Drain Current (A) EAS , Single Pulse Avalanche Energy (mJ) 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 800 700 600 500 Typical VGS(th) Gate threshold Voltage (V) 3.5 3.0 2.5 2.0 ID = 100µA 1.5 ID = 250µA ID = 1.0mA 1.0 ID = 1.0A 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Te.

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Published: Aug 27, 2015 |