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IRG7PH28UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH28UD1MPBF Description

  IRG7PH28UD1PbF IRG7PH28UD1MPbF  C   VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION .

IRG7PH28UD1MPBF Features

*  Low VCE (ON) trench IGBT technology
*  Low switching losses
*  Square RBSOA
*  Ultra-low VF diode
*  1300Vpk repetitive transient capacity
*  100% of the parts tested for ILM
*  Positive VCE (ON) temperature co-efficient
*  Tight parameter distribution
*  Lead

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG7PH28UD1MPBF-like datasheet