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IRG7PH35UPBF, IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH35UPBF Description

PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR .

IRG7PH35UPBF Features

* Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Fre

IRG7PH35UPBF Applications

* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged transient performance for increased reliability
* Excellent current sharing in parallel operation C GC E Applications
* U. P. S We

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRG7PH35UPBF, IRG7PH35U-EP. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRG7PH35UPBF, IRG7PH35U-EP
Manufacturer
International Rectifier
File Size
397.80 KB
Datasheet
IRG7PH35U-EP-InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRG7PH35UPBF, IRG7PH35U-EP.
Please refer to the document for exact specifications by model.

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG7PH35UPBF-like datasheet