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IRGB15B60KD - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number	IRGB15B60KD
Manufacturer	International Rectifier ↗
File Size	373.45 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB15B60KD_InternationalRectifier.pdf

IRGB15B60KD Product details

Features

Low VCE (on) Non Punch Through IGBT Technology. www. DataSheet4U. com.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. n-channel VCE.

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Published: May 30, 2007 |