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IRGS4630DPBF Insulated Gate Bipolar Transistor

IRGS4630DPBF Description

IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C C.

IRGS4630DPBF Applications

* Appliance Drives
* Inverters

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