of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o
✔ HGTP3N60C3D Application
operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA4
HGTP3N60C3, Intersil Corporation
HGTD3N60C3S, HGTP3N60C3
Data Sheet January 2000 File Number 4139.5
6A, 600V, UFS Series N-Channel IGBTs
The HGTD3N60C3S and the HGTP3N60C3 are MOS ga.
HGTP3N60C3D, Fairchild Semiconductor
S E M I C O N D U C T O R
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Packaging
.
HGTP3N60C3D, Harris Corporation
S E M I C O N D U C T O R
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Packaging
.
HGTP3N60A4, Intersil Corporation
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
Data Sheet January 2000 File Number 4825
600V, SMPS Series N-Channel IGBT
The HGTD3N60A4S, HGT1S3N60A4S and the.
HGTP3N60A4, Fairchild Semiconductor
HGTD3N60A4S, HGTP3N60A4
Data Sheet August 2003
600V, SMPS Series N-Channel IGBT
The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switchi.
HGTP3N60A4D, Fairchild Semiconductor
HGT1S3N60A4DS, HGTP3N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1S3N60A4DS and the HGT.
HGTP3N60A4D, Intersil Corporation
HGT1S3N60A4DS, HGTP3N60A4D
Data Sheet January 2000 File Number 4818
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1S3N60.
HGTP3N60B3, Intersil Corporation
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Data Sheet January 2000 File Number 4368.1
7A, 600V, UFS Series N-Channel IGBTs
The HGTD3N60B3S, HGT1S3N60B3S a.
