Part number:
HGTP3N60C3D
Manufacturer:
Intersil Corporation
File Size:
273.87 KB
Description:
N-channel igbt.
HGTP3N60C3D Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49113. The diode used
HGTP3N60C3D Datasheet (273.87 KB)
Datasheet Details
HGTP3N60C3D
Intersil Corporation
273.87 KB
N-channel igbt.
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