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JANSR2N7440 Formerly Available as FSS913A0R4/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs

JANSR2N7440 Description

JANSR2N7440 Data Sheet November 1999 File Number 4803 Formerly Available as FSS913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs T.

JANSR2N7440 Features

* 10A, -100V, rDS(ON) = 0.280Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose R

JANSR2N7440 Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

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Datasheet Details

Part number
JANSR2N7440
Manufacturer
Intersil Corporation
File Size
71.55 KB
Datasheet
JANSR2N7440_IntersilCorporation.pdf
Description
Formerly Available as FSS913A0R4/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs

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Formerly Available FSS913A0R4 Radiation Hardened SEGR Resistant P-Channel Power MOSFETs Intersil Corporation
Intersil Corporation JANSR2N7440-like datasheet