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IRF221 - N-Channel Power MOSFET

IRF221 Description

Semiconductor IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field effect transistors.

IRF221 Features

* 4.0A and 5.0A, 150V and 200V
* rDS(ON) = 0.8Ω and 1.2Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “G

IRF221 Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09600. October 1997

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Datasheet Details

Part number
IRF221
Manufacturer
Intersil Corporation
File Size
68.87 KB
Datasheet
IRF221_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Intersil Corporation
Intersil Corporation IRF221-like datasheet

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