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IRF222 - N-Channel Power MOSFET

IRF222 Description

Semiconductor IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field effect transistors.

IRF222 Features

* 4.0A and 5.0A, 150V and 200V
* rDS(ON) = 0.8Ω and 1.2Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “G

IRF222 Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09600. October 1997

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Datasheet Details

Part number
IRF222
Manufacturer
Intersil Corporation
File Size
68.87 KB
Datasheet
IRF222_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Intersil Corporation
Intersil Corporation IRF222-like datasheet

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