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MSAHZ52F120A, MSAGZ52F120A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

MSAHZ52F120A Description

www.DataSheet4U.com 2830 S.Fairview St.Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGZ52F120A MSAHZ52F120A 1200 Volts 52 Amps 3.2.
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc).

MSAHZ52F120A Features

* Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon re

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This datasheet PDF includes multiple part numbers: MSAHZ52F120A, MSAGZ52F120A. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MSAHZ52F120A, MSAGZ52F120A
Manufacturer
Microsemi ↗ Corporation
File Size
69.99 KB
Datasheet
MSAGZ52F120A_MicrosemiCorporation.pdf
Description
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: MSAHZ52F120A, MSAGZ52F120A.
Please refer to the document for exact specifications by model.

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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Microsemi Corporation
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