MRF21085LSR3, MRF21085R3 RF Power Field Effect Transistors

Motorola

MRF21085LSR3 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF21085/D The RF MOSFET Line RF Power Field Effect Tr.
Short Ferrite Bead, Fair Rite, #2743019447 43 pF Chip Capacitors, ATC #100B430JCA500X 10 pF Chip Capacitor, ATC #100B100JCA500X 1000 pF Chip Capacitor.

MRF21085LSR3 Features

* f2 = 2145 MHz 2110 2130 2150 2170 f, FREQUENCY (MHz) Figure 5. Third Order Intermodulation Distortion versus Output Power 14.5 14 13.5 13 12.5 12 11.5 2 10 Pout, OUTPUT POWER (WATTS) η VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz G ps 60 50 η, DRAIN EFFICIENCY (%) η, DRAIN EFFICIENCY (%) 40 30 20

MRF21085LSR3 Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
* Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 1000 m

📥 Download Datasheet

MRF21085LSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF21085LSR3, MRF21085R3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF21085LSR3, MRF21085R3
Manufacturer: Motorola
File Size: 562.19 KB
Datasheet: MRF21085R3_Motorola.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF21085LSR3, MRF21085R3.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistors Motorola

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