Datasheet Specifications
- Part number
- MRF21085R3
- Manufacturer
- Motorola
- File Size
- 562.19 KB
- Datasheet
- MRF21085R3_Motorola.pdf
- Description
- RF Power Field Effect Transistors
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF21085/D The RF MOSFET Line RF Power Field Effect Tr.
Features
* f2 = 2145 MHz 2110 2130 2150 2170 f, FREQUENCY (MHz) Figure 5. Third Order Intermodulation Distortion versus Output Power 14.5 14 13.5 13 12.5 12 11.5 2 10 Pout, OUTPUT POWER (WATTS) η VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz G ps 60 50 η, DRAIN EFFICIENCY (%) η, DRAIN EFFICIENCY (%) 40 30 20Applications
* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.MRF21085R3 Distributors
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