* f2 = 2145 MHz 2110 2130 2150 2170 f, FREQUENCY (MHz) Figure 5. Third Order Intermodulation Distortion versus Output Power 14.5 14 13.5 13 12.5 12 11.5 2 10 Pout, OUTPUT POWER (WATTS) η VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz G ps 60 50 η, DRAIN EFFICIENCY (%) η, DRAIN EFFICIENCY (%) 40 30 20
MRF21085SR3 Datasheet (562.19 KB)
MRF21085SR3
Motorola
562.19 KB
Rf power field effect transistors.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF21085/D
The RF MOSFET Line
RF Power Field Effect Tr.
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