MRF21090R3 RF Power Field Effect Transistors

Motorola

MRF21090R3 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF21090/D The RF Sub - Micron MOSFET Line RF Power Fi.

MRF21090R3 Features

* MENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. R M bbb M (INSULATOR) (LID) M (INSULATOR) M ccc M T A M B S T A T A M B B M Freescale Semiconductor, Inc N ccc H M M M (LID) aaa M T A M B C E A (FL

MRF21090R3 Applications

* with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
* Typical W - CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH: Output Power
* 11.5 Watts Efficiency
* 16% Gain
* 12.2 dB A

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Datasheet Details

Part number: MRF21090R3
Manufacturer: Motorola
File Size: 556.53 KB
Datasheet: MRF21090R3_Motorola.pdf
Description: RF Power Field Effect Transistors

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Power Field Effect Transistors Motorola

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