Datasheet4U Logo Datasheet4U.com

MRF21090SR3 Datasheet - Motorola

MRF21090SR3 RF Power Field Effect Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21090/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Typical W - CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH: Output Power 11.5 Watts Efficiency 16% Gain.

MRF21090SR3 Features

* MENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. R M bbb M (INSULATOR) (LID) M (INSULATOR) M ccc M T A M B S T A T A M B B M Freescale Semiconductor, Inc N ccc H M M M (LID) aaa M T A M B C E A (FL

MRF21090SR3 Datasheet (556.53 KB)

Preview of MRF21090SR3 PDF
MRF21090SR3 Datasheet Preview Page 2 MRF21090SR3 Datasheet Preview Page 3

Datasheet Details

Part number:

MRF21090SR3

Manufacturer:

Motorola

File Size:

556.53 KB

Description:

Rf power field effect transistors.

📁 Related Datasheet

MRF21090R3 RF Power Field Effect Transistors (Motorola)

MRF21010LR1 RF Power Field Effect Transistors (Freescale Semiconductor)

MRF21010LR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs (Motorola)

MRF21010LSR1 RF Power Field Effect Transistors (Freescale Semiconductor)

MRF21010LSR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs (Motorola)

MRF21030LR3 RF Power Field Effect Transistors (Motorola)

MRF21030LSR3 RF Power Field Effect Transistors (Motorola)

MRF21030R3 RF POWER FIELD EFFECT TRANSISTORS (Motorola)

MRF21030SR3 RF POWER FIELD EFFECT TRANSISTORS (Motorola)

MRF21045LR3 RF Power Field Effect Transistors (Motorola)

TAGS

MRF21090SR3 Power Field Effect Transistors Motorola

MRF21090SR3 Distributor